03 May Gallium Arsenide (GaAs)
Posted at 22:26h
in GeAs
Gallium Arsenide (GaAs) crystal have a good chemical stability and a good transmission in the range 2-14μm
| Specification | |
|---|---|
| Transmission wavelength | 1000nm - 14000nm |
| Material | GaAs |
| Density (gr/cm³) | 5.32 @300K |
| Dielectric constant | 12.85/10.88 @300K |
| Melting point (°C) | 1238 |
| Band gap (ev) | 1.4 |
| Thermal expansion coefficient (1/°C) | 5.7*10¯⁶ @300K |
| Thermal Conductivity (J/k.m.s.) | 55 @300K |
| Bulk modulus (Gpa) | 101.32 |
| Shear modulus (Gpa) | 55.66 @298K |
| Knoop hardness (Kg/mm²) | 731 |
| Young modulus (GPa) | 138.5 |
| Poisson ratio | 0.31 |
| Debye temperature (k) | 360 |
| Absorption coefficient | 0.01 @2500nm-11000nm |
| Thermo-optical coefficient | 160-120*10¯⁶ @3000nm-12000nm |
Gallium Arsenide (GaAs) lens
| Technical parameter | Commercial grade | Precision grade | High precision grade |
|---|---|---|---|
| Dimension range | 1-600mm | 2-600mm | 2-600mm |
| Dimension tolerance | ±0.1mm | ±0.025mm | ±0.01mm |
| Thickness tolerance | ±0.1mm | ±0.025mm | ±0.01mm |
| Angle tolerance | ±3' | ±15" | ±5" |
| Surface quality | 60-40 | 40-20 | 20-10 |
| Surface accuracy | 1.0λ | λ/10 | λ/20 |
| Coating | 3-5µm or 8-12µm AR, <5% per surface | ||
| Bevelling | 0.1-0.5mmx45° | ||
| Substrate | Gallium Arsenide (GaAs) | ||