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02 May Diffusion Bonded Crystal
Posted at 11:58h
in Diffusion bonded crystals
Advantages
- Improve and enhance the thermal performance
- Reduce and face of the thermal left effect
- Increase the output power of the laser crystal
Specifications
Type | YVO₄+Nd:YVO₄, YVO₄+Nd:YVO₄,+YVO₄, YAG+Nd:YAG, YAG+Nd:YAG+YAG, Nd.YAG+Cr:YAG | ||
---|---|---|---|
Dimension tolerance | W(+/-0.1)*H(+/-0.1)*L(+0.5/-0.1)mm | ||
Angle tolerance | +/-0.25° | Parallelism | ≤10' |
Surface quality | 20/10 | Chamfer | ≤0.2mmx45° |
Perpendicularity | ≤10" | Chips | ≤0.1mm |
Flatness | λ/10@633nm | Clear aperture | ≥90% |
Wavefront distortion | λ/8@633nm | ||
Coating | C1 - AR@1064(R<0.2%)&808(R<0.5%) | ||
Damage threshold | >1GW/cm² (1064nm), 10ns, 10Hz) |
Standard products
P/N | Dopant | Orientation | Dimension (mm) | Coating |
---|---|---|---|---|
NYV-20-3301-C6/C2 | 2% | A-CUT | 3x3x1 | S1: HR@1064&532&HT@808nm S2: AR@1064&532nm |
NYV-10-3302-C6/C2 | 1% | A-CUT | 3x3x2 | S1: HR@1064&532&HT@808nm S2: AR@1064&532nm |
NYV-10-3303-C6/C2 | 1% | A-CUT | 3x3x3 | S1: HR@1064&532&HT@808nm S2: AR@1064&532nm |
NYV-07-3303-C6/C2 | 0.7% | A-CUT | 3x3x3 | S1: HR@1064&532&HT@808nm S2: AR@1064&532nm |
NYV-07-3303-C4/C2 | 0.7% | A-CUT | 3x3x3 | S1: HR@1064&532&808nm S2: AR@1064&532nm |
NYV-07-3305-C4/C2 | 0.7% | A-CUT | 3x3x5 | S1: HR@1064&532&808nm S2: AR@1064&532nm |
NYV-05-3305-C5/C1 | 0.5% | A-CUT | 3x3x5 | S1: HR@1064&808nm S2: AR@1064nm |
NYV-05-3310-C3/C1 | 0.5% | A-CUT | 3x3x10 | S1: HR@1064&808nm S2: AR@1064nm |
NYV-03-3310-C3/C1 | 0.3% | A-CUT | 3x3x10 | S1: HR@1064&808nm S2: AR@1064nm |
NYV-03-3312-C3/C1 | 0.3% | A-CUT | 3x3x12 | S1: HR@1064&808nm S2: AR@1064nm |
NYV-027-3310-C3/C1 | 0.27% | A-CUT | 3x3x10 | S1: HR@1064&808nm S2: AR@1064nm |
NYV-027-3312-C3/C1 | 0.27% | A-CUT | 3x3x12 | S1: HR@1064&808nm S2: AR@1064nm |
NYV-02-3310-C3/C1 | 0.2% | A-CUT | 3x3x10 | S1: HR@1064&808nm S2: AR@1064nm |
NYV-02-3312-C3/C1 | 0.2% | A-CUT | 3x3x12 | S1: HR@1064&808nm S2: AR@1064nm |
Non-Standard products
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